Parameter
Symbol
Unit
Maximum Recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Forward rectified current (See fig. 1)
Maximum forward voltage at IO
Forward surge current, 8.3ms single half sine-wave superimposed on
rated load (JEDEC method)
Maximum Reverse current
at 25°C per leg (Note1)
Maximum Reverse current
at 100°C per leg (Note1)
Page 1
QW-BB047
Chip Schottky Barrier Rectifier
REV:A
Comchip Technology CO., LTD.
VRRM
VRMS
VDC
IO
VF
IFSM
IR
TJ
60
42
60
8.0
0.75
175
5.0
50
100
70
100
V
V
V
A
V
A
mA
°C
0.85
Operating temperature range
Storage temperature range
TSTG
4.0
°C
-55 to +150
3
2=4
Dimensions
in
inches
and
(
millimeters)
TO-263/D2PAK
0.413(10.50)
0.394(10.00)
0.114(5.30)
0.098(4.40)
0.370(9.40)
0.327(8.30)
0.059(1.50)
0.031(0.80)
0.205(5.20)
0.189(4.80)
0.063(1.60)
0.055(1.30)
0.024(0.60)
0.014(0.35)
0.055(1.40)
0.047(1.20)
0.185(4.70)
0.169(4.30)
0.106(2.70)
0.091(2.30)
Reverse V
oltage: 60 to 100 Volts
Forward Current: 8.0
Amp
RoHS Device
CDBD8060-G Thru. CDBD8100-G
a=25
OC, unless otherwise noted)
Maximum Ratings (At T
8060-G
CDBD
8100-G
CDBD
IR
mA
RθJC
°C/W
Typical Thermal resistance junction to case Per Leg
-55 to +150
3
2
1
4
Features
-Batch
process
design, excellent
power
dissipation
offers
better
reverse
leakage current
and
thermal
resistance.
-Low
profile
surface
mounted
application
in
order
to
optimize
board
space.
-Low
power
loss, high
efficiency.
-High
current
capability, low
forward
voltage
drop.
-High
surge
capability.
-Guardring
for
overvoltage
protection.
-Ultra
high-speed
switching.
-Silicon
epitaxial
planar
chip, metal
silicon
junction.
-Lead-free
parts
meet
environmental
standards
of
MIL-STD-19500 /228
Mechanical data
-
Polarity: As marked.
-Weight:1.46 gram(approx.).
-
Weunting Position: Any
Notes: 1. Pulse Test: 300μS pulse width, 1% duty cycle.
-
Case: TO-263/D2PAK, Transfer Molded.
-Terminals: Solderable per MIL-STD-202,
method 208.
-Epoxy: U/L
94-V0 rate flame retardant.
Comchip
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